COMMON-EMITTER L-BAND SMALL-SIGNAL SILICON TRANSISTOR AMPLIFIER.
Abstract
Using the 2.5-millimicron L-83 and L-153B device geometries, devices were fabricated in the TI-Line package, with common emitter power gain up to 11 dB at 2 GHz. Use of the miniature coaxial package gave devices with power gains up to 13 dB at 2 GHz. Photomasks are on order which will be more usable than the 1.25-millimicron geometry and will represent sufficient improvement over existing device geometries to permit the realization of 14 dB gain at 2 GHz.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1967
- Accession Number
- AD0823389
Entities
People
- A. J. Anderson
- Julius Lange
Organizations
- Texas Instruments