THE SCATTERING MECHANISM OF CURRENT CARRIERS IN TELLURIUM ALLOYED GALLIUM PHOSPHIDE (ZUM STREUMECHANISMUS VON STROMTRAGERN IN TELLUR-DOTIERTEM GALLIUMPHOSPHID).
Abstract
The Hall coefficient and specific conductivity were determined on single n-type tellurium-doped gallium phosphide crystals in the 77 - 600K temperature range to establish the temperature-dependence of these values and to gain further insight into the mechanism of carrier scattering. The temperature-dependence of the electrical conductivity and of the Hall coefficients in typical crystals are shown. On the basis of the experimental data, the relation between electron mobility and temperature was determined. Typical results are presented. The main determining factor in the scattering mechanism is scattering on optical photons (polar scattering); however, in the low end of the temperature range investigated and in instances where the crystal is grossly contaminated, other factors, such as space charge, also become significant. The temperature-dependence of the Hall effect suggests a donor level with an ionization energy of approximately 0.11 electron-Volt.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1967
- Accession Number
- AD0824065
Entities
People
- D. N. Nasledov
- S. I. Radautsan
- S. V. Slobodchikov
- V. V. Negreskul
Organizations
- National Air and Space Intelligence Center