UHF INTEGRATED CIRCUIT TECHNOLOGY.
Abstract
The report describes the design and development of a monolithic UHF amplifier using transistor-simulated inductance as an interstage element. Monolithic circuits have been fabricated using both junction isolation and dielectric isolation: an insertion gain of 12 dB and pass-band of 20-500 MHz was obtained with junction isolation and an insertion gain of 14 dB and pass-band of 20-700 MHz with dielectric isolation. The noise figure of the circuits measured at 500 MHz was 9-10 dB in the former case and 6-7 dB in the latter. The excess noise of the simulated inductance is discussed and its effect on the noise figure of the amplifier determined. A modified form of the circuit for reduced noise is described. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1967
- Accession Number
- AD0824431
Entities
People
- G. M. Purnaiya
- J. A. Archer