CLEAN SURFACE STUDIES ON SEMICONDUCTORS.
Abstract
The final report covers surface states on cleaved (111) silicon surfaces and electroabsorption effects in silicon and germanium crystals. Experimental results are given on conductivity changes resulting when single crystal silicon is cleaved in ultra-high vacuum over various temperature ranges for gold doped and high resistivity silicon. Both experimental and theoretical results on electroabsorption effects in silicon and germanium are presented. Results are given on direct observation of phonons in silicon by electric-field-modulated optical absorption. A method of optical detection of defects in the solid state is discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1967
- Accession Number
- AD0824454
Entities
People
- Paul Handler
Organizations
- University of Illinois Urbana–Champaign