LOW-TEMPERATURE EPITAXY OF SILICON JUNCTIONS BY ULTRAHIGH VACUUM TECHNIQUES.
Abstract
The results of a detailed structural investigation of the homoepitaxial growth of vacuum-sublimed films of silicon in uhv are presented and discussed. The in-situ LEED observations made on the film surfaces during growth have been correlated with electron microscopy evaluations of film quality both for (111) and (100) deposits. Epitaxial growth is achieved at temperatures as low as 400C on (111) and 350C on (100); however, the (111) films are faulted for growth temperatures in the range 400 to 650C. The faults are shown to originate in the nucleation of a mixed surface structure which is easily recognizable in the LEED patterns of the growing films. A sputtering system for the growth of epitaxial Si films under residual uhv conditions was constructed, with the aim of maintaining better control of film composition. Preliminary spreading resistance measurements on vacuum sublimed layers are presented and interpreted. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1967
- Accession Number
- AD0824785
Entities
People
- Maurice H. Francombe
- Richard N. Thomas