THE APPLICATION OF MOLECULAR RADIATION IN THE PRODUCTION OF P-N TRANSITIONS BY EVAPORATING GERMANIUM TO A DESIRED DEGREE OF DOPING ON A MONOCRYSTALLINE GERMANIUM SUPPORT OF THE OPPOSITE CONDUCTION TYPE,
Abstract
The article reports on previous research in the field and on the preparation of p-n junctions by vapor-coating special germanium substrates with germanium of opposite conductance type. The investigation was carried out in vacuum. As substrates, (111)-oriented, n-conducting germanium single-crystal plates with a resistivity of 4 ohm cm were used and the condensation surfaces were polished and chemically etched Germanium of p-type, with a resistivity of 0.004 ohm cm, was used for vapor coating. Heat was supplied via electron bombardment. The excess gas pressure in the recipient was around 0.00005 Torr, and the thickness of the deposited layers around 5 millimicrons. The current-voltage characteristics of the deposited layers were determined from the contacted specimens. The inverse current at 1 V was 20 microamps, which corresponds to a current density of 0.12 mA/sq cm. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 21, 1967
- Accession Number
- AD0824872
Entities
People
- H. Poser
Organizations
- National Air and Space Intelligence Center