VACUUM EMISSION OF FIELD ENHANCED PHOTOELECTRONS FROM METAL-INSULATORS-METAL THIN FILM STRUCTURES.

Abstract

Al-Al2O3-Au thin film sandwiches were fabricated using electron beam evaporation and electrolytic anodization. Internal photoemission measurements yielded an insulator barrier height of 1.68 eV at the Al-Al2O3 interface and a dielectric constant of 3.74. External photoemission measurements in an ultra-high vacuum system yielded normal energy distribution curves which support the theory that electron-phonon scattering in the Al2O3 layer is the principal cause of attenuation in the hot electron stream. Contrary to assumed theory, analysis of the experimental distribution curves, for photon wavelengths of 4060 A and 5460 A, indicated that there is a direct proportion between attenuation and the initial energy of the photoexcited electrons. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1967
Accession Number
AD0825170

Entities

People

  • Frank C. Vogel Jr.
  • Ray M. Wallace

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Attenuation
  • Dielectric Permittivity
  • Dielectrics
  • Distribution Curves
  • Electron Beams
  • Electrons
  • Emission
  • Films
  • High Vacuum
  • Measurement
  • Photoelectric Emission
  • Photoelectrons
  • Thin Films
  • Vacuum

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Plasma Physics / Magnetohydrodynamics
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene