ELEMENT DEVELOPMENT FOR ADVANCED ASSOCIATIVE MEMORIES.
Abstract
A research and development program to develop materials and investigate their use in an electro-optical associative processor is described. An analytical study evaluates the logic application of electro-optical memory cells in a processor organization and examines the various tradeoffs in design. The material effort directed toward the development of thin film photoconductor and ferroelectric materials is discussed. The effort culminated in the definition of fabrication process for a cadmium sulfide photoconductor that can switch a ferroelectric element in 30 micro-seconds with a 2 foot-candle illumination and a process for a new ferroelectric material. These materials were demonstrated with a thin film processor model. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1967
- Accession Number
- AD0825274
Entities
People
- Jacques M. Hanlet
- Ralph W. Haas