SEMICONDUCTOR LASER MODULATION TECHNIQUES.
Abstract
The report summarizes results for the entire program. The program involved theoretical and experimental analysis to identify the attributes and limitations of semiconductor modulation techniques. Important factors considered were bandwidth, efficiency, noise and distortion. A breadboard model was built utilizing a lead-zirconate-titanate ceramic piezoelectric modulator packaged with a GaAs laser diode in a good thermal laser/modulator unit. A linear wavelength shift of 0.001 Angstroms per volt of modulator voltage was obtained at 77K and 4.2K. A maximum shift in excess of 0.1 Angstrom was measured. The modulator represents a capacitive load of about 500 picofarads. An optical discriminator measurement technique used was capable of detecting frequency shifts of a few MHz. The significance of multimode laser operation is discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1967
- Accession Number
- AD0825784
Entities
People
- William Mallory
Organizations
- General Electric