FAILURE MECHANISMS IN MOS TRANSISTORS.

Abstract

The main objectives of the study are to determine the basic failure mechanisms characteristic of silicon insulated gate field effect transistors (IGFET), identify the sources of failure, and develop techniques for reliability screening and stress testing of the finished device. The device type selected for study was the Motorola MM2103, a silicon p-channel-enhancement IGFET. Twelve failure mechanisms have been isolated during the study. Surface polarization, a major problem with the initial devices, was reduced to a nondetectable level for the final group (Unit Group III) of devices. Physical and electrical analysis of failed devices has revealed a possible method of reliability screening. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1967
Accession Number
AD0825795

Entities

People

  • Art Sanera
  • Harry Forehand
  • Lowell Clark

Organizations

  • Motorola Mobility

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Polarization
  • Reliability
  • Semiconductor Devices
  • Transistors

Fields of Study

  • Engineering

Readers

  • Semiconductor Device Technology
  • Software Engineering

Technology Areas

  • Microelectronics