DEVELOPMENT AND FABRICATION OF SOLID-STATE HIGH-SPEED OPTICAL DETECTORS
Abstract
The development, fabrication, and characterization of a high-speed silicon avalanche photodiode for 0.9 micrometers are described. Two structures, an NP Pi P and a graded-guardring N(+)P structure, were fabricated. On the planar NP Pi P structure, edge breakdown was found to be a problem of structures having wide Pi-regions. Since wide depletion layer widths are required for high ac quantum efficiency at 0.9 micrometers, effort was shifted entirely to the N(+)P structure. Final characterization showed that all the N(+)P diodes delivered had low-noise avalanche gains greater than 160, with many diodes exhibiting gains greater than 1000. The diodes typically have a series resistance of 50 ohms, junction capacitance of 1.3 pF, noise slope of 2.5 or less, ac quantum efficiency of 35 percent, bulk leakage current of 0.5 nA, and a breakdown voltage of 170 volts. The NEP of a 30-MHz bandwidth photodetector system was found to measure 2 x 10 to the minus 13th power W Hz to the minus 1/2 power at an optimum gain of 160--a factor of 100 improvement over a non-avalanching photodetector.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1967
- Accession Number
- AD0826033
Entities
People
- Wallace N. Shaunfield
Organizations
- Texas Instruments