A SMALL SIGNAL ANALYSIS OF AMPLIFICATION IN N-TYPE GAAS.
Abstract
An analytic expression for the small signal equivalent impedance of an n-type GaAs diode is found by piecewise linearizing the characteristic of the average drift velocity of the electron as function of the electric field. The calculated results are in agreement with the observed amplification characteristics. It is found that the boundary condition is important in determining the mode of operation. A zero cathode field leads to amplification at an applied voltage near the threshold value, and a finite cathode field leads to amplification at prethreshold voltages. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1967
- Accession Number
- AD0826117
Entities
People
- Chih-chung Wang
Organizations
- Cornell University College of Engineering