A REVIEW OF RAPID ANNEALING IN NEUTRON IRRADIATED SEMICONDUCTORS.

Abstract

Recent Defense Atomic Support Agency (DASA)-funded research in the rapid annealing of fast neutron-induced defects in semiconductor materials and devices is reviewed. Attention is directed to the development of the physical model proposed for the two-stage anneal seen in devices.

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1968
Accession Number
AD0826143

Entities

People

  • David C. Straw
  • Stanley O. Kennedy Sr

Organizations

  • Air Force Research Laboratory

Tags

DTIC Thesaurus Topics

  • Annealing
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Fast Neutrons
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Materials
  • Neutrons
  • Semiconductors
  • Silicon Carbide
  • Silicon Compounds
  • Solid State Electronics

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Nuclear and Radiation Engineering.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics