INVESTIGATION OF A PIN-STRUCTURE GERMANIUM PHOTOVOLTAIC CELL.

Abstract

The structural advantages of a planar p-i-n photovoltaic cell in which both junctions are formed on the same face of an intrinsic region are discussed. Device parameters are reviewed and a specific design is proposed. Fabrication techniques are discussed. A pulse method for measuring the incremental diffusion coefficient and the incremental lifetime of a semiconductor at high injection levels is proposed. Apparatus for this measurement is described. A computer-aided analytical method for evaluation of the two-dimensional distribution and flow of excess carriers in semiconductors at high injection levels is described. This technique is applied to the flow problem that exists in the base region of the bipolar transistor. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1967
Accession Number
AD0826559

Entities

People

  • D. L. Smythe
  • J. G. Kassakian
  • P. E. Gray
  • T. Schlax

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Cells
  • Coefficients
  • Compound Semiconductors
  • Computers
  • Diffusion
  • Diffusion Coefficient
  • Electronic Equipment
  • Electronics
  • Fabrication
  • Germanium
  • Measurement
  • Semiconductors
  • Solar Cells
  • Transistors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Fluid Dynamics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics