DEVELOPMENT OF A 1-WATT, 2 GHZ SILICON UHF POWER TRANSISTOR.
Abstract
A 1-watt, 2-gigahertz device, coaxial transistor, having 6- to 7-dB power gain and 30- to 40-percent collector efficiency was developed in this program. This significant increase in UHF device performance is the result of technology developed during shallow diffusion and epitaxial material studies. The transistor is enclosed in a hermetic coaxial package, developed during the package study phase of this program. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1968
- Accession Number
- AD0826723
Entities
People
- H. C. Lee
- P. L. Mcgeough