DEVELOPMENT OF A NONDESTRUCTIVE RADIATION EFFECTS PREDICTION TECHNIQUE.
Abstract
Techniques were developed for predicting silicon transistor and diode performance after displacement damage from neutron radiation. A method of predicting transistor current gain for n-p-n and p-n-p devices was investigated that utilizes empirical damage factor data and the measured base transit time for each device. The linear reciprocal gain relationship with fluence was found to be applicable over a wide range in current except where the transistor operates in saturation at high currents. The investigation emphasized passively irradiated devices. Current gain annealing while in shelf storage and inverse annealing from repetitive high-current measurements were found to be important in calculations of the empirical damage factor. Prediction methods for other transistor performance parameters were investigated, including saturation voltage, leakage current, breakdown voltage, forward voltage and switching times. A model for operation in saturation was developed and evaluated for several transistor types. Correlation between predicted and measured data was generally acceptable when empirical data of a specific transistor type were used to predict performance in other transistors of the same type. Forward voltage for power diodes was predicted by including the effects of radiation in V-I curves derived by Lieb, Jackson, and Root. Techniques have been formulated that enable circuit designers to predict semiconductor performance in neutron radiation. Improved modeling and additional data on carrier removal effects are needed to remove existing limitations on the prediction of transistor operation in saturation and forward voltage of high resistivity diodes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1968
- Accession Number
- AD0826859
Entities
People
- Max Frank
- Richard J. Sweet