TRANSISTOR, UHF, SILICON, POWER, LINEAR, 50-WATT, 500-MHZ WITH 10-DB POWER GAIN.
Abstract
The objective was to produce a transistor capable of delivering 50 watts of output power at 500 megahertz with 10-dB power gain and 50-percent efficiency. The fabrication of a metal-oxide-metal transistor employing integral leads was achieved. Processing problems imposed limitations in device fabrication that required an alternate approach. Advances in technology and package design were applied to a device in which overlay technology and double-base geometry with integral leads were employed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1968
- Accession Number
- AD0827335
Entities
People
- G. Hodowanec
- J. F. O'brien