300C SEMICONDUCTOR FOR POWER DEVICES.
Abstract
The successful design and development of a 50-ampere rectifier with reverse breakdown over 150 volts, operable in a 300C ambient temperature, is described. High-operating-temperature and reverse-breakdown requirements led to the choice of gallium arsenide and gallium arsenide-phosphide as the semiconductor materials employed. The rectifier junctions were grown by vapor phase epitaxial techniques, and very-high breakdown voltage was achieved. Growth of defect-free large-area (0.175-mil diameter) junctions was a major accomplishment. A complete process for rectifier fabrication was developed, including etching, contacting, mounting, and junction coating techniques. The results of mechanical, electrical, and environmental tests are presented. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1968
- Accession Number
- AD0827343
Entities
People
- L. A. Krassner
- R. E. Enstrom