RESEARCH AND DEVELOPMENT OF SEMICONDUCTOR DIODES FOR USE IN HARMONIC GENERATOR APPLICATIONS USING SINGLE DIODES.
Abstract
Diodes capable of giving 1 watt of output power at 12 GHz in the nine times multiplier was developed. The diode consists of two junctions in series within a single package. Direct conductive removal of dissipated power is provided for both elements. The construction details and fabrication techniques for the diodes are given. The characterization of these diodes in respect to capacitance, cutoff frequencies, snap time, and thermal resistance is discussed. The diode has a reverse-bias junction capacitance of 4 pF and a 90 V breakdown. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 19, 1967
- Accession Number
- AD0827362
Entities
People
- Keith R. Slinn
- V. P. Singh
Organizations
- M/A-COM Technology Solutions