DEVELOPMENT OF NANOVOLT PREAMPLIFIERS FOR INFRARED DETECTORS AND SIMILAR APPLICATIONS.
Abstract
Experimental results show that bipolar, field-effect, and monolithic preamplifiers can be built with a sensitivity of 50 nanovolts per root hertz, or better, at 1000 hertz. Such preamplifiers will amplify extremely low signals generated by infrared detectors and similar units, and will keep system noise to a minimum at the same time. A sensitivity of 10 nanovolts per root hertz at 1000 hertz can be achieved with the use of the monolithic preamplifier. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 13, 1968
- Accession Number
- AD0827784
Entities
People
- A. Skoures
Organizations
- Naval Air Warfare Center Warminster