FAILURE MECHANISMS IN SEMICONDUCTOR DIODES.
Abstract
The failure modes which have been identified are described in terms of the stress conditions required to induce them and the rates at which response may be observed. Typical values of the degraded parameter and the recovery characteristics are also discussed. All of the stresses utilized were highly accelerated, and the discussion is subdivided into the general classes of forward and reverse bias stresses. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1968
- Accession Number
- AD0827968
Entities
People
- A. Fox
- B. L. Bair
- E. A. Herr
- J. F. Schenck
Organizations
- General Electric