GUNN EFFECT DEVICES
Abstract
Excellent quality solution-grown gallium arsenide is being routinely produced by a transient growth technique. Controlled doping has been achieved with a doping profile of less than 10% over typical device lengths. A steady state growth system is now in operation to produce even better controlled gallium arsenide material with little or no doping profile. Device geometry optimization is continuing with increasing improvement in low sample temperature rise, power output, efficiency, and FM noise. Sample FM noise is consistently low with levels of a few cycles at 10 KHz from the carrier (6-13 GHz) in a 200 Hz bandwidth and for relatively low Q's of around 200.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1968
- Accession Number
- AD0828306
Entities
People
- J. Barrera