STUDIES OF THE GROWTH OF SINGLE CRYSTAL LAYERS OF SEMICONDUCTORS ON DIELECTRIC SUBSTRATES.
Abstract
The purpose of this program was to increase understanding of the basic factors controlling the deposition (nucleation and growth) of single-crystal layers of semiconductors onto dielectric substrates. In addition, it was desired, if feasible, to limit nucleation to a single site, or a small number of sites, in a controlled area, and to grow laterally to desired dimensions. The means for achieving this was to be the use of a temperature gradient and/or a flux gradient across the surface of the substrate. In order to determine the conditions required for the control of nucleation in this manner and to obtain information regarding the factors affecting nucleation, critical condensation tests were performed in two systems - (a) from silane-hydrogen mixtures onto sapphire substrates, and (b) by evaporation from CdS onto sapphire and Pyrex substrates. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1967
- Accession Number
- AD0828540
Entities
People
- C. A. Neugebauer
- D. C. Jillson
- V. A. Russell
Organizations
- General Electric