DEVELOPMENT OF AVALANCHE OSCILLATORS AT 10 GHZ AND 18.3 GHZ.

Abstract

Avalanche diode oscillators for X-band were operated from 200 to 300 mW of power. The mesa diode construction is described. Several mechanically tuned cavities are discussed which tune approximately 1 GHz at X-band. Reduction of FM noise by high Q cavities are presented. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 08, 1968
Accession Number
AD0828951

Entities

People

  • Jean-claude R. Collinet
  • Meyer Gilden
  • William J. Moroney

Organizations

  • M/A-COM Technology Solutions

Tags

DTIC Thesaurus Topics

  • Active Electronic Components
  • Avalanche Diodes
  • Construction
  • Diodes
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Mesa Diodes
  • Oscillators
  • Semiconductor Devices
  • Semiconductor Diodes
  • Solid State Electronics
  • X Band

Fields of Study

  • Physics

Readers

  • Electronics Engineering