TRANSISTOR, HF, SILICON, POWER, LINEAR (300 W PEP, 30 MHZ).
Abstract
Metal-oxide-metal transistors have been built which use titanium nickel gold metallization. A compatible all beryllia package suitable for flip-chip mounting has been designed and fabricated. Large area devices are being built on one chip by using a yield increasing discretionary wiring technique called 'cell selection'. Lower thermal resistance on devices can be achieved by following the 'thermally symmetrical' design concepts. Epitaxial emitter stabilizing resistors have been made. An integrated protection scheme has been devised which prolongs device life. Matching and stability considerations peculiar to the 300W device are analyzed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1968
- Accession Number
- AD0831289
Entities
People
- R. J. Boncuk