CHARACTERIZATION OF AVALANCHE TRANSIT-TIME DIODES.
Abstract
The microwave preformance of an avalanche transit-time diode as an oscillator and amplifier is examined. Small- and large-signal characteristics of avalanche silicon p-n junction diode have extensively and quantitatively been investigated. The experimental system and techniques for measuring the pulse-operated avalanche diode admittance are described. Results of diode admittance and diode Q factor are presented. The nonlinearity and broad frequency range of negative diode admittance are identified. The experimental results are in good agreement with theoretical analyses. The avalanche diode can be represented by an equivalent circuit consisting of a negative conductance in parallel with a capacitive susceptance. Both real and imaginary parts of the diode admittance are bias, frequency, and oscillatory amplitude dependent. These dependencies are described on the basis of experimental results. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1968
- Accession Number
- AD0831638
Entities
People
- Chi-cheong Shen
Organizations
- Cornell University College of Engineering