A GUNN DIODE OPERATED IN THE HYBRID MODE.
Abstract
A new mode of operation of microwave semiconductor diodes is proposed which uses the negative differential mobility associated with the Gunn effect. This mode, called the hybrid mode, is characterized by having the domain formation time T sub D of the same order of magnitude as the active portion of the r-f period, and by a product of doping density and sample length (noL) between 10 to the 12th power sq cm and 10 to the 13th power sq cm. The sample contains a growing dipole layer during a large fraction of each r-f cycle. If T sub D is less than the active portion of the r-f period, a traveling domain may form which is subsequently annihilated during the r-f period. Comparison between the hybrid mode and the LSA mode is made. The hybrid mode retains the advantages of the LSA mode, yet it avoids its disadvantages. In particular it is tunable over a broad frequency band, and it is relatively insensitive to load conditions. It can be operated in a very wide range of r-f circuits and it does not readily lead to sample failure caused by avalanche breakdown. The complete transient analysis of the dipole potential is performed. This analysis provides information about the dipole growth rate and the domain formation time. In addition it can lead to an improvement on the model of the hybrid mode described in this report. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1968
- Accession Number
- AD0831639
Entities
People
- Ho-chung Huang
Organizations
- Cornell University College of Engineering