MICROWAVE GENERATION FROM AVALANCHE TRANSIT TIME DIODES
Abstract
Work during the second quarter was devoted to device geometry optimization, inverted chip mounting, diamond heat sink classification and evaluation of noise characteristics. While inverted chip mounting was effective in reducing thermal resistance, oscillator efficiency was lower than that obtained from similar devices conventionally mounted. Several possible reasons for the poor RF performance of inverted chip diodes are being investigated. However, conventionally-mounted devices were pulse tested and over 1 watt of peak pulse power was obtained at 8.6 GHz, with 7 percent efficiency. These diodes are being studied as models of desired characteristics in inverted mount devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1968
- Accession Number
- AD0831898
Entities
People
- Arthur H. Solomon
- Clifford Levi
- Ernst Scherer
Organizations
- Sylvania Electric Products