300 deg C Transformer Rectifier

Abstract

Techniques for preparing gallium-arsenide surfaces free of damage and suitable for epitaxial growth were investigated. A method of substrate preparation to be used for preliminary growth studies was introduced. Growth studies were started in a water vapor transport epitaxial system. This system was constructed specifically to evaluate the structure of epitaxial films in relation to the substrate. Design improvements to reduce contamination of epitaxial layers due to leaks and corrosion were made on the vapor hydride epitaxial system. This improved system is expected to be in operation shortly.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1968
Accession Number
AD0832013

Entities

People

  • L. Krassner

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Chemistry
  • Contracts
  • Dislocations
  • Electrical Properties
  • Electronic Components
  • Epitaxial Growth
  • Finishes
  • Gallium Arsenides
  • High Temperature
  • Materials
  • Particle Size
  • Polishing
  • Rectifiers
  • Surface Roughness
  • Test And Evaluation
  • Water Vapor

Readers

  • Electrical Engineering
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene