COMMON-EMITTER L-BAND SMALL-SIGNAL SILICON TRANSISTOR AMPLIFIER.
Abstract
NPN double-diffused silicon microwave transistors were fabricated using 2.5-micrometers and 1.9-micrometers widths and spacings. The 2.5-micrometers devices had common-emitter maximum available gains of up to 13.0 dB at 2.0GHz. The 1.9-micrometers devices had gains of up to 12.6 dB in the TI-Line package and up to 14.3 dB in the miniature coaxial package. The devices exhibited 2.0GHz noise figures as low as 3.5 dB. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1968
- Accession Number
- AD0832793
Entities
People
- A. J. Anderson
- Charles F. Dennis
- Julius Lange
Organizations
- Texas Instruments