GE-SI HETEROJUNCTIONS AS NANOSECOND SWITCHING DIODES (HETEROZLACZA GE-SI JAKO NANOSEKUNDOWE DIODY PRZELACZAJACE),

Abstract

Three versions of a high-speed switching diode employing Ge-Si heterojunctions are described. Switching time for all three is independent of minority carrier lifetime and base thickness (150 microns). The diodes differ only specific resistance of the Si base (D1, 12 ohm-cm; D2, 1.2 ohm-cm; in t0.12 ohm-cm). Parameters of the diodes for a bias voltage of -4 v are given.

Document Details

Document Type
Technical Report
Publication Date
Aug 18, 1967
Accession Number
AD0832926

Entities

People

  • Elzbieta Janik

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Heterojunctions
  • Minority Groups
  • Nanosecond Time
  • Resistance
  • Switching
  • Thickness

Fields of Study

  • Materials science

Readers

  • Computer Engineering
  • Semiconductor Device Technology