AU-ZNTE SCHOTTKY BARRIER FABRICATION BY LOW-ENERGY ION ETCHING TECHNIQUES.
Abstract
A new method for semiconductor surface preparation for fabrication of metal-semiconductor rectifying heterojunctions is proposed and junctions of gold on gallium arsenide and gold on zinc telluride have been analyzed. The barrier heights for Au-GaAs diodes fabricated by low-energy (100 eV) ion etching of GaAs surfaces immediately prior to metalization were found to be in excellent agreement with barriers height of diodes fabricated by vacuum cleaving techniques. The most probable value of barrier height for Au-ZnTe structures fabricated by the ion etching technique was determined to be 0.48 eV with a maximum deviation of 0.03 eV. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1968
- Accession Number
- AD0833283
Entities
People
- Henry R. Mannex
Organizations
- Air Force Institute of Technology