EFFECT ON ETCH RATE OF OXIDE SURFACES AFTER ELECTRON BOMBARDMENT.

Abstract

Effects on the etch rate of oxide films after irradiation with 10-to 20-keV electrons have been studied using the scanning electron microscope as a source of electrons. Five types of films were investigated: thermally grown SiO2, evaporated Al2O3, anodic Al2O3, anodic Ta2O5, and rf-sputtered Pyrex. Results verified the enhanced etch rate of SiO2 and showed a retarded etched rate for Al2O3 and Ta2O5; results of the investigation of Pyrex were inconclusive. The retardation of evaporated Al2O3 varied linearly with the accumulated surface charge density until saturation was reached at 2.0 C/sq cm. Evaporated Al2O3 exhibited a retardation factor of 1.51. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1968
Accession Number
AD0833329

Entities

People

  • Joe A. Howard

Organizations

  • Air Force Institute of Technology

Tags

DTIC Thesaurus Topics

  • Charge Density
  • Electron Microscopes
  • Electrons
  • Films
  • Microscopes
  • Optical Equipment
  • Optical Magnification Devices
  • Oxide Films
  • Oxides
  • Retardation
  • Saturation
  • Scanning
  • Scanning Electron Microscopes

Fields of Study

  • Materials science

Readers

  • Combustion science or combustion engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene