DESIGN AND DEVELOPMENT OF INTEGRATED SEMICONDUCTOR CIRCUITS UTILIZING FIELD - EFFECT DEVICES.
Abstract
The purpose of the report contract is to develop methods of controlling power losses in the shift register and to improve the frequency response of the video amplifier developed under the previous contract number NObsr 91334. This work was accomplished under three phases. Under phase I, an investigation was conducted on selected metals and insulators applicable to MIS structures in order to enhance the electrical performance of MOS-FETS. Under Phase II the nitride technology was applied to develop a dual 25-Bit MNOS Shift Register. The primary advantage obtained was extremely low power dissipation. Under Phase III a MOS-Biopolar Transistor capability was applied to a wide band video amplifier design. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 31, 1968
- Accession Number
- AD0834268
Entities
Organizations
- Westinghouse Electric Corporation