DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR.

Abstract

Power MOSFETS were processed which meet some of the d-c design goals of the contract, namely drain current of three amps, BV sub DSS congruent to 60 V. These devices were operated at 40 watts d-c dissipation with 80C case temperature. Detailed operating surface temperature measurements indicate a stable thermal system. Switching times of about 30 ns at 2A were also measured. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1968
Accession Number
AD0834793

Entities

People

  • W. C. Bruncke

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Active Electronic Components
  • Contracts
  • Dissipation
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Field Effect Transistors
  • Measurement
  • Semiconductor Devices
  • Surface Temperature
  • Switching
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Thermal Physics or Thermal Science.