GUNN EFFECT DEVICES
Abstract
Former work involved the design and fabrication of CW Gunn effect oscillators in the range from 4 to 13 GHz and with output powers greater than 25 mw. By solving the GaAs material problem with solution epitaxy, the CW device investigation led to the fabrication of samples oscillating in the range 4 to 13 GHz with outputs up to 140 mw with over 5% efficiency and with maximum sample temperatures of about 170C. The FM noise is qualitatively correlated to the sample current noise and is typically less than 45 Hz at 10 KHz from the carrier in a bandwidth of 200 Hz for Q's 200 (50 db carrier power to noise power ratio). The contract involves the study of high power, high duty factor pulsed Gunn effect devices. A listing is given of pertinent design requirements and the various problems that will be considered. The initial approach to the problems is outlined and a design calculation given. The schematic of a very simple pulse amplifier using RCA overlay transistors is shown along with output data of 10 amp, 1 micro sec pulses and voltage pulses across both Gunn oscillator and resistor loads.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1968
- Accession Number
- AD0835265
Entities
People
- J. Barrera