STUDY OF NOISE IN SEMICONDUCTOR DEVICES.

Abstract

The noise parameters of several junction gate FET's have been determined. Experimental MOS FET tetrodes show a large amount of 1/f noise at lower frequencies, but the high-frequency noise is quite acceptable. Silicon current limiter diodes show the same noise behavior as a junction FET, as expected theoretically. The circuit parameters of microwave transistors, such as the base resistance rb, were determined from noise measurements at 5 MHz. The agreement with other parameter measurements is very good. The current dependence of the 1/f noise in the base current of silicon transistors at elevated temperatures is quite comparable with the current dependence of the shot noise. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1968
Accession Number
AD0835274

Entities

People

  • A. Van Der Ziel

Organizations

  • University of Minnesota

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Current Limiters
  • Field Effect Transistors
  • Frequency
  • Measurement
  • Semiconductor Devices
  • Semiconductors
  • Shot Noise
  • Transistors

Readers

  • Acoustics.
  • Electronics Engineering

Technology Areas

  • Microelectronics