FORMATION OF THIN-FILM PASSIVE DEVICES BY VACUUM TECHNIQUES,
Abstract
In the period of April 19 through April 23, 1965, three U.S. Naval Avionics Facility (NAFI) personnel were given detailed instruction on the techniques and instructions applicable to the formation and characterization of passive devices. Details of the equipment, materials, vendors, deposition procedure, monitoring techniques and device characterization were given by Melpar personnel. Articles covering much of the passive device work carried out at Melpar were furnished to NAFI personnel. Approximately 130 extreme environment capacitors and 90 resistors were formed under the observation of NAFI personnel. Of the devices formed, approximately 50% of the capacitors met desired specifications and 50% of the resistors met the design objectives. Of the capacitors, approximately 90% were useful at somewhat lower temperatures than those called for in the specifications. List of key words denoting principal coverage of report: (1) Borosilicate Capacitors; (2) Dysprosium Oxide Capacitors; (3) Evaporated Thin-Films; (4) Rhenium Resistors; (5) Thin-Film Passive Devices; (6) Vacuum Deposition Techniques. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 23, 1965
- Accession Number
- AD0836041
Entities
People
- F. J. Hemmer
- Richard C. Smith
Organizations
- Melpar