DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR.

Abstract

Parasitic components of junction gate and insulated-gate field-effect-transistors were examined. Particular emphasis was directed toward evaluating their effects of the high-frequency performance of these devices. Using the results of this examination, a modified version of the initial power MOSFET was designed. The first run produced devices with similar d-c characteristics, but greatly reduced parasitic capacitance values. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1968
Accession Number
AD0836102

Entities

People

  • W. C. Bruncke

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Capacitance
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Field Effect Transistors
  • Frequency
  • Frequency Bands
  • Semiconductor Devices
  • Solid State Electronics
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics