A NEW METHOD OF DEPOSITING SILICON CARBIDE FOR HIGH-MODULUS FIBERS,

Abstract

A process has been developed which is capable of depositing silicon carbide on a heated substrate by means of liquid film-boiling on the submerged hot object. The film-boiling process, when adapted to a continuously moving filament, will build a 1-mil diameter substrate up to 4.5 mils with a silicon carbide coating in one minute of plating time. The process produces a layered concentric deposit. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1968
Accession Number
AD0837156

Entities

People

  • Vernon A. Nieberlein

Organizations

  • United States Army Aviation and Missile Command

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Boiling
  • Carbides
  • Coatings
  • Compound Semiconductors
  • Diameters
  • Filaments
  • Film Boiling
  • Silicon
  • Silicon Carbide
  • Substrates

Readers

  • Neural Network Machine Learning.
  • Reinforced Composite Materials
  • Semiconductor Device Technology