SPECTROGRAPHIC DETERMINATION OF IMPURITIES IN GALLIUM ARSENIDE (SPEKTROGRAFICZNE OZNACZANIE ZANIECZYSZCZEN W ARSENKU GALU),

Abstract

A method for determining Pb, Al, Cu, Zn, Si, Tl, and Fe in gallium arsenide is described. The gallium from one sample dissolved in an HCl-HNO3 mixture is extracted with isobutyl acetate. The Pb, Al, Cu, and Zn are adsorbed in a column using Dowex-50 cationite. The arsenic in the form of arsenate passes through the column together with the solution. The cations eluted from the column are enriched with graphite powder and determined spectrographically. The Si, Tl, and Fe from a sample not enriched with graphite power are also determined spectrographically. This method permits the analysis of gallium arsenide for semiconductors with a relative error of 12-34% for a sample of 1.5 grams. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 18, 1967
Accession Number
AD0838843

Entities

People

  • Ewa Laszkiewicz

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Arsenates
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Gallium
  • Gallium Arsenides
  • Graphitic Materials
  • Impurities
  • Inorganic Chemicals
  • Semiconductors
  • Solid State Electronics

Readers

  • Analytical Chemistry
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics