LOW-NOISE MICROWAVE TRANSISTORS.
Abstract
A number of NPN double-diffused silicon microwave transistors were fabricated using 1.9-micro meters widths and spacings. These devices had common-emitter maximum available gains up to 11.5 dB at 3 GHz. The 6.0-GHz gain was extrapolated to be approximately 5.5 dB. These measurements were obtained from devices mounted in the miniature coaxial package. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1968
- Accession Number
- AD0840070
Entities
People
- Charley F. Dennis
- Julius Lange
Organizations
- Texas Instruments