DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR.
Abstract
Power MOSFET's (P-channel enhancement), buried-gate FET'S, and conventional junction-gate FET's were examined to determine which structure is best suited for a high power, high frequency amplifier. The buried-gate FET proved very difficult to process for desirable electrical characteristics. Characteristics reported on the other structures include dc, small-signal Y parameters, calculated power gain, power amplifier measurements, and switching circuit measurements. The power MOSFET structures tested for this contract achieved up to 30 W RF output at 30 MHz with very low distortion characteristics. Small signal JG-FET units gave 1 W output at 175 MHz with similarly low distortion characteristics. Changing the MOSFET to an improved geometry layout and to N-channel depletion mode (Class AB RF operation) looks promising for an RF linear amplifier. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1968
- Accession Number
- AD0840793
Entities
People
- Charles Hutchins
Organizations
- Texas Instruments