GUNN EFFECT DEVICES

Abstract

During the last quarterly period, time has been spent on organizing material requirements and setting up microwave and pulse bias circuitry along with producing initial runs of 'scaled-up' CW units for use as pulse devices. Initial testing has shown efficiencies as high as 8% but more normally around 5 to 6 1/2%. Power levels were below 1 1/4 watts due to improper device fabrication but are expected to improve appreciably in future runs. Thermal and geometrical considerations have been given to single and multiple unit sandwich type devices. Multiple chip unit problems were considered and various modes of operation have been studied for more efficient operation. LSA operating range has been considered to be too confined for low frequency operation in general. Hybrid mode and resonant transit time modes seem to hold more promise for achieving required pulse performance.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1968
Accession Number
AD0841056

Entities

People

  • J. Abrrera

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Contracts
  • Efficiency
  • Electronics
  • Export Controls
  • Frequency
  • Government (Foreign)
  • Gunn Effect
  • Impedance
  • J Band
  • Microwaves
  • New Jersey
  • New York
  • Resonance
  • Resonant Frequency
  • Transmission Lines
  • United States
  • X Band

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Systems Analysis and Design