Radiation Effects on Gallium Arsenide Devices and Schottky Diodes, Volume II.
Abstract
Three gallium arsenide (GaAs) Gunn oscillators, several GaAs Transistors, and an optoelectronic pulse amplifier were investigated in a flash X-ray environment. Pulsed fast neutron damage to these devices was also studied. Test data for the transistors were compared to data for a 2N914 silicon transistor because both device characteristics are similar. Two Gunn diodes in the flash X-ray pulse reacted violently at 3 x 10 to the 8th power rad/sec. Individual components of the amplifier, including a GaAs light-emitting diode and a silicon light sensor, were studied. The light sensor is the critical element in the amplifier, being highly sensitive to the neutron fluences. However, physical limitations precluded study of flash X-ray effects upon a separate light emitter. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1968
- Accession Number
- AD0842805
Entities
People
- H. D. Southward
- R. H. Schnurr
Organizations
- University of New Mexico