Diffusion From Doped Oxides.
Abstract
The report describes the evaluation of thin films of silicon dioxide (silica) as potential diffusion sources for silicon semiconductor technology. The oxide films are deposited from an aqueous suspension of colloidal silica. Dopants are added to the suspension in the form of water-soluble compounds so that when the oxide film is applied and dried, a doped oxide film is formed. With this method the concentration of dopant in the silica is easily controlled over a wide range. The factors studied were junction depth and surface concentration as a function of oxide composition, oxide thickness, diffusion time, and diffusion temperature. Other properties of the oxide layer studied were index of refraction, etch rate, shrinkage, and densification treatments. Single and double junction devices were fabricated to illustrate the uniformity of diffusions produced by this technique. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1968
- Accession Number
- AD0843306
Entities
People
- D. R. Kudrak
Organizations
- NCR Corporation