Coaxial GaAs Varactor Diode.
Abstract
GaAs coaxial varactors with a self-contained 20 GHz resonator have been successfully constructed with nominal junction capacitances of 0.5 pf at 0 volts and punch-through voltages in excess of 15 volts. Thus, the high resonant frequency has been achieved at no sacrifice of the dynamic range of the device. Based on rf measurements at 2 GHz the capacitance of diode pairs in assembled coaxial varactors is repeatable to within plus or minus 8% with a yield of 60% and within plus or minus 2% with a yield of 20%. The cutoff frequency of balanced junctions is in excess of 600 GHz at punch-through voltage. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1968
- Accession Number
- AD0844202
Entities
People
- H. John Kuno
- Jacques R. Collard