Metallization Failures in Integrated Circuits

Abstract

Six potential failure modes involving aluminum as the metallization material for semiconductor devices have been investigated in an attempt to obtain a better understanding of the processes involved and to obtain equations which relate device failure to known physical parameters. This information should enable the construction of reliable devices with predictable lifetimes.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1968
Accession Number
AD0844307

Entities

People

  • James Black

Organizations

  • Motorola Mobility

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Boundaries
  • Crystal Lattices
  • Crystals
  • Current Density
  • Diffusion Coefficient
  • Electric Fields
  • Electrons
  • Equations
  • Failure Mode And Effect Analysis
  • Films
  • Grain Boundaries
  • Heat Of Activation
  • Phase Diagrams
  • Semiconductor Devices
  • Semiconductors
  • Silicon Dioxide

Fields of Study

  • Engineering

Readers

  • Structural Health Monitoring of Composite Structures.
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics