Solid-State Electronic Circuit Elements. Part III,

Abstract

The article continues with the description and basic analysis of semiconductor elements. All devices considered here are classified as triodes and they represent different variations of bipolar transistors. This group includes junction transistors (alloy, diffusion, pnip, mesa, epitaxial-planar, double-diffusion, surface-barrier), point-contact transistor, hook transistor, avalanche-effect, field-effect transistors, double-base diode and four-layer triode. The discussion of these devices covers their fabrication techniques and is illustrated by physical model diagrams, equivalent circuit diagrams and characteristic curves. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 21, 1967
Accession Number
AD0844476

Entities

People

  • A. Moeschwitzer
  • E. Koehler

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Circuits
  • Diffusion
  • Digital Circuits
  • East Germany
  • Electronic Circuits
  • Equivalent Circuits
  • Field Effect Transistors
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics