The Capabilities of Electron Beam - Semiconductor Active Devices,
Abstract
Some properties of a class of active elements employing an electron beam to control the output current of a semiconductor device are discussed in this paper. It is shown that the basic beam-semiconductor devices have high gains, fast response and large output capability. Numerical data are given that allow the capabilities of the device to be evaluated in a given application. It is shown that the extreme configurational flexibility of the device may be employed to enhance its basic performance capability as well as to realize unique devices that can rapidly perform complex functions. (Author
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1968
- Accession Number
- AD0844915
Entities
People
- C. B. Norris Jr.
Organizations
- Stanford University